- Department of Metrology and Optoelectronics
- Faculty of Electronics, Telecommunications and Informatics
Diamond-Phase (Sp3-C) Rich Boron-Doped Carbon Nanowalls (Sp2-C): A Physico-Chemical And Electrochemical Properties
The growth of B-CNW with different boron doping levels controlled by the [B]/[C] ratio in plasma, and the influence of boron on the obtained material’s structure, surface morphology, electrical properties and electrochemical parameters, such as -ΔE and k°, were investigated. The fabricated boron-doped carbon nanowalls exhibit activity towards ferricyanide redox couple, reaching the peak separation value of only 85 mV. The flatband...
Gas Composition Influence on the Properties of Boron-Doped Diamond Films Deposited on the Fused Silica
The main subject of this study are molecular structures and optical properties of boron-doped diamond films with [B]/[C] ppm ratio between 1000 and 10 000, fabricated in two molar ratios of CH 4 -H 2 mixture (1 % and 4 %). Boron-doped diamond (BDD) film on the fused silica was presented as a conductive coating for optical and electronic purposes. The scanning electron microscopy images showed homogenous and polycrystalline surface...
The density functional theory is one of the optimal solutions in calculation of optical properties of materials on the quantum scale. In this paper, we have investigated refractive index of a boron-doped diamond structure with the usage of Atomistic Toolkit software from Synopsys. During this study, various methods and pseudopotentials were checked to obtain an optimal performance-accuracy method for calculation of such materials....
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