Electrical and noise responses of graphene back-gated field-effect transistors enhanced by UV light for organic vapors sensing

Description

Back-gated field-effect transistors with graphene channels (GFETs) were investigated toward organic vapors sensing. Two methods were used for sensing experiments including DC characteristics measurements and fluctuation-enhanced sensing by low-frequency noise studies. The data set consists of raw and modified data on GFET responses to acetonitrile, tetrahydrofuran, chloroform, and acetone - DC and noise responses. The combination of electrical measurements with fluctuation-enhanced sensing enable enhanced vapors detection and underlie mechanisms responsible for surface processes under UV irradiation of graphene channel.

Dataset file

GFET_data.zip

5.2 MB, S3 ETag 7522a009547865997a953198d83f3017-1, downloads: 79

The file hash is calculated from the formula
hexmd5(md5(part1)+md5(part2)+...)-{parts_count} where a single part of the file is 512 MB in size.

Example script for calculation:
https://github.com/antespi/s3md5

download

File details

License:: open in new tab

CC BY

Attribution
Software:: Origin/Origin Viewer

Details

Year of publication:

2023

Verification date:

2023-02-22

Dataset language:

English

Fields of science:

automation, electronics, electrical engineering and space technologies (Engineering and Technology)

DOI:

10.34808/278q-s013

Funding:

System of gas detection by two-dimensional materials

Verified by:

Gdańsk University of Technology

Keywords

References

publication Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation

Cite as

Authors

seen 247 times

Search