Temperture-programmed reduction (H2-TPR) of Ni-Mo2CTx_Mo2Ga2C and Ni-Mo2CTx_Mo3AlC2 catalysts - Open Research Data - Bridge of Knowledge

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Temperture-programmed reduction (H2-TPR) of Ni-Mo2CTx_Mo2Ga2C and Ni-Mo2CTx_Mo3AlC2 catalysts

Description

The dataset includes the data for the preparation of plots illustrating the reduction peaks versus the temperature of the catalyst sample.

The parameters of H2-TPR analysis using In-situ Catalyst Characterization System PID purchased from Micrometrics Company:

- start temperature: 100 deg. C,

- end temperature - 900 deg. C,

- temperature rise 10 deg. C per minute

-pretreatment at 100 deg. C under helium for 60 min.

 Details of sample preparation of Ni-Mo2CTx_Mo2AlC3:

1 st step: MXene material was prepared via selective etching of aluminium using hydrofluoric acid (50%) for 96 h at room temperature. After the etching, the powders were flirted and washed with water and ethanol until pH reached 6. Then, the MXene was dried under vacuum at 50˚C for 24 h.

2 nd step: Nickel catalyst was prepared via impregnation of previously prepared Mo2CTx/Mo2AlC2 with aqueous nickel nitrate solution and drying at 50 deg. C under vacuum.

Details of sample preparation of Ni-Mo2CTx_Mo2Ga2C:

1 st step: The preparation procedure for Mo2CTx/Mo2GaC:

1) Etching of Mo2Ga2C with XF/HCl mixture (where X= Na, Li, K) under hydrothermal conditions at 90 deg. C for 24 or 48 hours.

2) Washing with water.

3) Dring at 50 deg. C under vacuum.

2nd step: The preparation procedure for Ni-Mo2CTx/Mo2GaC:

1) Impregnation of previously prepared Mo2CTx/Mo2GaC with aqueous nickel nitrate solution. 

2) Dring at 50 deg. C under vacuum.

 

Dataset file

H2-TPR.xlsx
2.5 MB, S3 ETag 2f580b37959748da4625073ef4e482bc-1, downloads: 77
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License:
Creative Commons: by 4.0 open in new tab
CC BY
Attribution

Details

Year of publication:
2022
Verification date:
2022-09-20
Creation date:
2021
Dataset language:
English
Fields of science:
  • chemical sciences (Natural sciences)
  • chemical engineering (Engineering and Technology)
DOI:
DOI ID 10.34808/gd35-9t19 open in new tab
Funding:
Verified by:
Gdańsk University of Technology

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