Detection of high intensity THz radiation by InP double heterojunction bipolar transistors - Publication - Bridge of Knowledge

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Detection of high intensity THz radiation by InP double heterojunction bipolar transistors

Abstract

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Authors (11)

  • Photo of Nina Dyakonova

    Nina Dyakonova

  • Photo of Dominique Coquillat

    Dominique Coquillat

  • Photo of Dmytro But

    Dmytro But

  • Photo of Frederic Teppe

    Frederic Teppe

  • Photo of Wojciech Knap

    Wojciech Knap

  • Photo of Virginie Nodjiadjim

    Virginie Nodjiadjim

  • Photo of Muriel Riet

    Muriel Riet

  • Photo of Agnieszka Konczykowska

    Agnieszka Konczykowska

  • Photo of Philipp Faltermeier

    Philipp Faltermeier

  • Photo of Peter Olbrich

    Peter Olbrich

  • Photo of Sergey Ganichev

    Sergey Ganichev

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Publication year:
2017
DOI:
Digital Object Identifier (open in new tab) 10.1109/irmmw-thz.2017.8067039
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