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Diamond-Phase (Sp3-C) Rich Boron-Doped Carbon Nanowalls (Sp2-C): A Physico-Chemical And Electrochemical Properties
Abstract
The growth of B-CNW with different boron doping levels controlled by the [B]/[C] ratio in plasma, and the influence of boron on the obtained material’s structure, surface morphology, electrical properties and electrochemical parameters, such as -ΔE and k°, were investigated. The fabricated boron-doped carbon nanowalls exhibit activity towards ferricyanide redox couple, reaching the peak separation value of only 85 mV. The flatband potential and the concentration of boron carriers were estimated in the B-CNW samples using the Mott-Schottky relationship. It was shown that the vertically oriented carbon planes are characterized by p-type conductivity and very high hole-acceptor concentration (3.33×1023 cm-3 for a highly doped sample), which provides high electrical conductivity. The enhanced electrochemical performance of B-CNWs electrodes is an advantageous feature that can be applied in ultrasensitive detection or energy storage devices.
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Authors (10)
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Miroslaw Sawczak
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Sanju Gupta
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Sara Carrizosa
Cite as
Full text
- Publication version
- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.1021/acs.jpcc.7b06365
- License
- Copyright (2017 American Chemical Society)
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Details
- Category:
- Articles
- Type:
- artykuł w czasopiśmie wyróżnionym w JCR
- Published in:
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Journal of Physical Chemistry C
no. 121,
pages 20821 - 20833,
ISSN: 1932-7447 - Language:
- English
- Publication year:
- 2017
- Bibliographic description:
- Sobaszek M., Siuzdak K., Ryl J., Sawczak M., Gupta S., Carrizosa S., Ficek M., Dec B., Darowicki K., Bogdanowicz R.: Diamond-Phase (Sp3-C) Rich Boron-Doped Carbon Nanowalls (Sp2-C): A Physico-Chemical And Electrochemical Properties// Journal of Physical Chemistry C. -Vol. 121, iss. 38 (2017), s.20821-20833
- DOI:
- Digital Object Identifier (open in new tab) 10.1021/acs.jpcc.7b06365
- Verified by:
- Gdańsk University of Technology
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