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Abstract
A novel concept of the drain separation design in a horizontally-split-drain GaAs MAGFET sensor, based on epitaxial layer growth, was developed. Proper choice of GaAs/AlAs/GaAs epitaxial layer sequence provided good electrical isolation between the drain regions. The measured leakage current between the drain regions was in the range of nA for up to 2V drain voltage bias difference. Performed analytical and numerical calculations allow us to expect much better magnetic field sensitivity from this type of MAGFET sensors.
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- Category:
- Conference activity
- Type:
- publikacja w wydawnictwie zbiorowym recenzowanym (także w materiałach konferencyjnych)
- Title of issue:
- APCOM'2007 : Proceedings of the 13th International Conference on Applied Physics of Condensed Matter, Bystra, Slovac Republic, 27-29 June, 2007 strony 36 - 39
- Language:
- English
- Publication year:
- 2007
- Bibliographic description:
- Kordalski W., Boratyński B., Panek M., Ściana B., Zborowska-Lindert I., Tłaczała M.: Magnetic field microsensor based on GaAs MESFET// APCOM'2007 : Proceedings of the 13th International Conference on Applied Physics of Condensed Matter, Bystra, Slovac Republic, 27-29 June, 2007/ ed. eds: D. Pudis, I. Martincek, I. Jamnicky. Žylina: University of Žylina, 2007, s.36-39
- Verified by:
- Gdańsk University of Technology
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