Measurement of sub-nanometer molecular layers with ISFET without a reference electrode dependency

Maciej Kokot

doi:10.1016/j.snb.2011.04.079

Measurement of sub-nanometer molecular layers with ISFET without a reference electrode dependency

Abstract

A new method of detection and measurement with sub-nanometer resolution of layers adsorbed or bonded to the ISFET's gate dielectric was presented. The sensitivity of this method is high enough to detect even partial mono-layer covering. The transconductance measurement of the ISFET provides independence of the output signal from pH changes and the driving electrode electrochemical potential instabilities. The stable reference electrode is not necessary to detect layers of various species on the sub mono-molecular scale.

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Maciej Kokot dr inż.

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Category:: Articles
Type:: artykuł w czasopiśmie wyróżnionym w JCR
Published in:: SENSORS AND ACTUATORS B-CHEMICAL no. 152, pages 424 - 429,
ISSN: 0925-4005
Language:: English
Publication year:: 2011
Bibliographic description:: Kokot M.: Measurement of sub-nanometer molecular layers with ISFET without a reference electrode dependency// SENSORS AND ACTUATORS B-CHEMICAL. -Vol. 152, nr. isss. 2 (2011), s.424-429
DOI:: Digital Object Identifier (open in new tab) 10.1016/j.snb.2011.04.079
Verified by:: Gdańsk University of Technology