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Modeling of Transient Photocurrent in Organic Semiconductors Incorporating the Annihilation of Excitons on Charge Carriers
Abstract
The role of the annihilation of excitons on charge carriers has been theoretically investigated in organic semiconductors. We have developed the numerical drift-diffusion model by incorporation terms which describe the annihilation process. The transient photocurrent has been calculated for different injection barrier heights, exciton mobilities, and annihilation rate constants. We have demonstrated that the annihilation has a great influence on the range and the rising time of the photocurrent.
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- Copyright (Instytut Fizyki Polskiej Akademii Nauk)
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- Category:
- Articles
- Type:
- artykuł w czasopiśmie wyróżnionym w JCR
- Published in:
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ACTA PHYSICA POLONICA A
no. 132,
edition 2,
pages 397 - 400,
ISSN: 0587-4246 - Language:
- English
- Publication year:
- 2017
- Bibliographic description:
- Głowienka D., Szmytkowski J.: Modeling of Transient Photocurrent in Organic Semiconductors Incorporating the Annihilation of Excitons on Charge Carriers// ACTA PHYSICA POLONICA A. -Vol. 132, iss. 2 (2017), s.397-400
- DOI:
- Digital Object Identifier (open in new tab) 10.12693/aphyspola.132.397
- Verified by:
- Gdańsk University of Technology
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