Performance Evaluation of a 650V E-HEMT GaN Power Switch

Piotr Czyż

doi:10.1109/iecon.2015.7392939

Performance Evaluation of a 650V E-HEMT GaN Power Switch

Abstract

GaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their advantages. In this paper a prototype of synchronous buck converter with two 650 V GaN HEMT power switches from GaN Systems Inc. is presented. Alternative approach to cooling surface mounted transistors through the PCB is proposed. Paper presents a solution with copper stud attached directly to thermal pad of the device and shows results of thermal measurements. Also electrical power losses are measured depending on switching frequency and output current. Finally, guidelines for proper PCB layout design, including methods for suppressing overvoltages, are given.

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Piotr Czyż

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Category:: Conference activity
Type:: materiały konferencyjne indeksowane w Web of Science
Title of issue:: 41st Annual Conference of the IEEE Industrial Electronics Society – IECON2015 strony 7 - 12
Language:: English
Publication year:: 2015
Bibliographic description:: Czyż P..: Performance Evaluation of a 650V E-HEMT GaN Power Switch, W: 41st Annual Conference of the IEEE Industrial Electronics Society – IECON2015, 2015, IEEE,.
DOI:: Digital Object Identifier (open in new tab) 10.1109/iecon.2015.7392939
Verified by:: Gdańsk University of Technology