The Effect of AgInS2, SnS, CuS2, Bi2S3 Quantum Dots on the Surface Properties and Photocatalytic Activity of QDs-Sensitized TiO2 Composite
Abstract
The eect of type (AgInS2, SnS, CuS2, Bi2S3) and amount (5, 10, 15 wt%) of quantum dots (QDs) on the surface properties and photocatalytic activity of QDs-sensitized TiO2 composite, was investigated. AgInS2, SnS, CuS2, Bi2S3 QDs were obtained by hot-injection, sonochemical, microwave, and hot-injection method, respectively. To characterize of as-prepared samples high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), X-ray diraction (XRD), UV-Vis spectroscopy and photoluminescence (PL) emission spectroscopy were applied. The size of AgInS2, SnS, CuS2, Bi2S3 QDs were 12; 2–6; 2–3, and 1–2 nm, respectively. The QDs and QDs-sensitized TiO2 composites obtained have been tested in toluene degradation under LEDs light irradiation (max = 415 nm and max = 375 nm). For pristine QDs the eciency of toluene degradation increased in the order of AgInS2 < Bi2S3 < CuS < SnS under 375 nm and AgInS2 < CuS < Bi2S3 < SnS under 415 nm. In the presence of TiO2/SnS QDs_15% composite, 91% of toluene was degraded after 1 h of irradiation, and this eciency was about 12 higher than that for pristine QDs under 375 nm. Generally, building the TiO2/AgInS2 and TiO2/SnS exhibited higher photoactivity under 375 nm than the pristine TiO2 and QDs which suggests a synergistic eect between QDs and TiO2 matrix.
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- Category:
- Articles
- Type:
- artykuły w czasopismach
- Published in:
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Catalysts
no. 10,
ISSN: 2073-4344 - Language:
- English
- Publication year:
- 2020
- Bibliographic description:
- Malankowska A., Kulesza D., Sowik J., Cavdar O., Klimczuk T., Trykowski G., Zaleska-Medynska A.: The Effect of AgInS2, SnS, CuS2, Bi2S3 Quantum Dots on the Surface Properties and Photocatalytic Activity of QDs-Sensitized TiO2 Composite// Catalysts -Vol. 10,iss. 4 (2020), s.403-
- DOI:
- Digital Object Identifier (open in new tab) 10.3390/catal10040403
- Verified by:
- Gdańsk University of Technology
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