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APPLIED PHYSICS LETTERS

ISSN:

0003-6951

eISSN:

1077-3118

Disciplines
(Field of Science):

  • automation, electronics, electrical engineering and space technologies (Engineering and Technology)
  • biomedical engineering (Engineering and Technology)
  • materials engineering (Engineering and Technology)
  • mechanical engineering (Engineering and Technology)
  • astronomy (Natural sciences)
  • chemical sciences (Natural sciences)
  • physical sciences (Natural sciences)

Ministry points: Help

Ministry points - current year
Year Points List
Year 2024 100 Ministry scored journals list 2024
Ministry points - previous years
Year Points List
2024 100 Ministry scored journals list 2024
2023 100 Ministry Scored Journals List
2022 100 Ministry Scored Journals List 2019-2022
2021 100 Ministry Scored Journals List 2019-2022
2020 100 Ministry Scored Journals List 2019-2022
2019 100 Ministry Scored Journals List 2019-2022
2018 40 A
2017 40 A
2016 35 A
2015 40 A
2014 40 A
2013 40 A
2012 40 A
2011 40 A
2010 32 A

Model:

Hybrid

Points CiteScore:

Points CiteScore - current year
Year Points
Year 2023 6.4
Points CiteScore - previous years
Year Points
2023 6.4
2022 6.4
2021 6.6
2020 6.9
2019 7
2018 6.7
2017 6.9
2016 6.8
2015 6.4
2014 6.1
2013 6.5
2012 6.7
2011 7

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total: 20

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Catalog Journals

Year 2024
  • Magnetic field mapping along a NV-rich nanodiamond-doped fiber
    Publication
    • A. Filipkowski
    • M. Mrózek
    • G. Stępniewski
    • M. Ficek
    • D. Pysz
    • W. Gawlik
    • R. Buczyński
    • A. M. Wojciechowski
    • M. Klimczak

    - APPLIED PHYSICS LETTERS - Year 2024

    Integration of NV−-rich diamond with optical fibers enables guiding quantum information on the spin state of the NV− color center. Diamond-functionalized optical fiber sensors have been demonstrated with impressive sub-nanotesla magnetic field sensitivities over localized magnetic field sources, but their potential for distributed sensing remains unexplored. The volumetric incorporation of diamonds into the optical fiber core allows...

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Year 2023
  • Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases
    Publication
    • J. Smulko
    • K. Drozdowska
    • A. Rehman
    • T. Welearegay
    • L. Österlund
    • S. Rumyantsev
    • G. Cywiński
    • B. Stonio
    • A. Krajewska
    • M. Filipiak
    • P. Sai

    - APPLIED PHYSICS LETTERS - Year 2023

    We report results of the current–voltage characteristics and low-frequency noise in Au nanoparticle (AuNP)-decorated graphene–Si Schottky barrier diodes. Measurements were conducted in ambient air with addition of either of two organic vapors, tetrahydrofuran [(CH2)4O; THF] and chloroform (CHCl3), as also during yellow light illumination (592nm), close to the measured particle plasmon polariton frequency of the Au nanoparticle...

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  • Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons
    Publication
    • A. Rehman
    • G. Cywiński
    • W. Knap
    • J. Smulko
    • A. Balandin
    • S. Rumyantsev

    - APPLIED PHYSICS LETTERS - Year 2023

    We report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current–voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons...

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Year 2021
  • Generation-recombination and 1/f noise in carbon nanotube networks
    Publication
    • A. Rehman
    • A. Krajewska
    • B. Stonio
    • K. Pavlov
    • G. Cywinski
    • D. Lioubtchenko
    • W. Knap
    • S. Rumyantsev
    • J. Smulko

    - APPLIED PHYSICS LETTERS - Year 2021

    The low-frequency noise is of special interest for carbon nanotubes devices, which are building blocks for a variety of sensors, including radio frequency and terahertz detectors. We studied noise in as-fabricated and aged carbon nanotube networks (CNNs) field-effect transistors. Contrary to the majority of previous publications, as-fabricated devices demonstrated the superposition of generation-recombination (GR) and 1/f noise...

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  • Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices
    Publication
    • A. Mohammadzadeh
    • A. Rehman
    • F. Kargar
    • S. Rumyantsev
    • J. Smulko
    • W. Knap
    • R. K. Lake
    • A. A. Balandin

    - APPLIED PHYSICS LETTERS - Year 2021

    We report on the depinning of nearly commensurate charge-density waves in 1T-TaS2 thin films at room temperature. A combination of the differential current–voltage measurements with the low-frequency noise spectroscopy provides unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current—in striking contrast...

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  • Topological, nonreciprocal, and multiresonant slow light beyond the time-bandwidth limit
    Publication

    - APPLIED PHYSICS LETTERS - Year 2021

    Topologically protected transport has recently emerged as an effective means to address a recurring problem hampering the field of slow light for the past two decades: its keen sensitivity to disorders and structural imperfections. With it, there has been renewed interest in efforts to overcome the delay-time-bandwidth limitation usually characterizing slow-light devices, on occasion thought to be a fundamental limit. What exactly...

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Year 2019
Year 2016
Year 2014
Year 2013
  • Comment on "On accurate capacitance characterization of organic photovoltaic cells"
    Publication

    In the 100th volume of Applied Physics Letters Carr and Chaudhary have presented a work on capacitance characterization of organic photovoltaic cells. The work concerns small signal measurements of various organic photovoltaic structures. The authors however limit their considerations to one part of small signal response, namely to capacitance measured either in parallel mode or in series mode. This attitude generally does not...

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Year 2011
Year 2008
Year 2007
Year 2006
Year 2002
  • Efficient exciplex emitting organic electroluminescent devices
    Publication
    • M. Cocchi
    • D. Virgili
    • G. Giro
    • V. Fattori
    • J. Kalinowski
    • Y. Shirota

    - APPLIED PHYSICS LETTERS - Year 2002

    W pracy badano stany wzbudzenia elektronowego, powstające z udziałem dwóch molekuł. Dzięki doborowi odpowiednich materiałów na warstwę przewodzącą dziury (pochodna trójfenyloaminy: m-MTDATA) i elektronów (pochodna oksadia-zolu:PBD) w cienkowarstwowej diodzie EL stworzono szczególnie dogodne warunki do generacji ekscypleksów (M-MTDATA-PBD) i wysokowydajnej (>1% foton/e-lektron) emisji ekscypleksowej.

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  • Electric field-assisted dissociation of singlet excitons in tris-(8-hydro-xyquinolinato)aluminium (III)
    Publication

    W pracy podano szczegółowemu badaniu kompleks organo-metaliczny 8-hydroksy-chinoliny i aluminium (ALq3) metodą pomiaru fotopądów i elektromodulacji luminescencji. Stwierdzono, że w obszarze wysokich pól elektrycznych (F>105 V/cm) ładunek wytwarzany jest w procesie dysocjacji wzbudzonych stanów single-towych. Wyjaśnienie przebiegów prądowych w zakresie niskich pól elektrycznych (F<105 V/cm) wymagało włączenia zjawiska rekombinacji...

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