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Ministry points: Help
| Year | Points | List |
|---|---|---|
| Year 2024 | 40 | Ministry scored journals list 2024 |
| Year | Points | List |
|---|---|---|
| 2024 | 40 | Ministry scored journals list 2024 |
| 2023 | 40 | Ministry Scored Journals List |
| 2022 | 40 | Ministry Scored Journals List 2019-2022 |
| 2021 | 40 | Ministry Scored Journals List 2019-2022 |
| 2020 | 40 | Ministry Scored Journals List 2019-2022 |
| 2019 | 40 | Ministry Scored Journals List 2019-2022 |
| 2018 | 20 | A |
| 2017 | 20 | A |
| 2016 | 20 | A |
| 2015 | 20 | A |
| 2014 | 20 | A |
| 2013 | 20 | A |
| 2012 | 20 | A |
| 2011 | 20 | A |
| 2010 | 20 | A |
Model:
Points CiteScore:
| Year | Points |
|---|---|
| Year 2022 | 2.3 |
| Year | Points |
|---|---|
| 2022 | 2.3 |
| 2021 | 2.4 |
| 2020 | 2.2 |
| 2019 | 2 |
| 2018 | 2 |
| 2017 | 2 |
| 2016 | 1.7 |
| 2015 | 1.8 |
| 2014 | 2.4 |
| 2013 | 2.3 |
| 2012 | 2 |
| 2011 | 1.7 |
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Papers published in journal
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total: 5
Catalog Journals
Year 2023
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Evolution of Physical Properties of RE 3 Ni 5 Al 19 Family (RE = Y, Nd, Sm, Gd, Tb, Dy, Ho, and Er)
PublicationSingle crystals of RE3Ni5Al19 series (RE = Y, Nd, Sm, Gd, Tb, Dy, Ho, and Er) are grown using the Al self-flux method. The crystal structure is examined by both single crystal and powder X-ray diffraction. Physical properties are studied for the first time for RE3Ni5Al19 (RE = Y, Nd, Gd, Tb, Dy, Ho, and Er) by means of magnetic susceptibility, electrical resistivity, and heat capacity measurements. Complex magnetic behaviors, with...
Year 2011
Year 2010
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Nano - and microcrystals of doped niobates
PublicationPublikacja przedstawia wyniki analizy pomiarów wysokotemperaturowej rentgenografii strukturalnej niobanu lantanu domieszkowanego magnezem.
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Synthesis of acceptor-doped Ba-Ce-Zr-O perovskites
PublicationPublikacja przedstawia wyniki badań stukturalnych i elektrycznych domieszkowanego akceptorow cerianu baru.
Year 2002
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Analysis of the interfacial energy of GaAs-Si hetrostructures
PublicationPrzeprowadzono obliczenia numeryczne energii powierzchni heterogranicy GaAs-Si z zastosowaniem półempirycznego modelu czteroparametrycznego Acklanda. Pokazano zależność energii heterogranicy od orientacji podłoża Si. Minima energetyczne otrzymano dla orientacji Si równych (011), (133), (112) i (113) co wskazuje ich zastosowanie do epitaksjalnego wzrostu warstw GaAs.
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