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CRYSTAL RESEARCH AND TECHNOLOGY

ISSN:

0232-1300

eISSN:

1521-4079

Disciplines
(Field of Science):

  • automation, electronics, electrical engineering and space technologies (Engineering and Technology)
  • biomedical engineering (Engineering and Technology)
  • materials engineering (Engineering and Technology)
  • environmental engineering, mining and energy (Engineering and Technology)
  • medical biology (Medical and Health Sciences )
  • pharmacology and pharmacy (Medical and Health Sciences )
  • agriculture and horticulture (Agricultural sciences)
  • biotechnology (Natural sciences)
  • chemical sciences (Natural sciences)
  • physical sciences (Natural sciences)

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Year Points List
Year 2024 40 Ministry scored journals list 2024
Ministry points - previous years
Year Points List
2024 40 Ministry scored journals list 2024
2023 40 Ministry Scored Journals List
2022 40 Ministry Scored Journals List 2019-2022
2021 40 Ministry Scored Journals List 2019-2022
2020 40 Ministry Scored Journals List 2019-2022
2019 40 Ministry Scored Journals List 2019-2022
2018 20 A
2017 20 A
2016 20 A
2015 20 A
2014 20 A
2013 20 A
2012 20 A
2011 20 A
2010 20 A

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Points CiteScore - current year
Year Points
Year 2023 2.5
Points CiteScore - previous years
Year Points
2023 2.5
2022 2.3
2021 2.4
2020 2.2
2019 2
2018 2
2017 2
2016 1.7
2015 1.8
2014 2.4
2013 2.3
2012 2
2011 1.7

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Catalog Journals

Year 2023
Year 2011
Year 2010
Year 2002
  • Analysis of the interfacial energy of GaAs-Si hetrostructures
    Publication
    • A. Zdyb
    • J. M. Olchowik
    • D. Szymczuk
    • J. Mucha
    • K. Zabielski
    • M. Mucha
    • W. Sadowski

    - CRYSTAL RESEARCH AND TECHNOLOGY - Year 2002

    Przeprowadzono obliczenia numeryczne energii powierzchni heterogranicy GaAs-Si z zastosowaniem półempirycznego modelu czteroparametrycznego Acklanda. Pokazano zależność energii heterogranicy od orientacji podłoża Si. Minima energetyczne otrzymano dla orientacji Si równych (011), (133), (112) i (113) co wskazuje ich zastosowanie do epitaksjalnego wzrostu warstw GaAs.

Year 2001

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