Depth profile of the composition of 8 nm Al2O3 thin film - Open Research Data - MOST Wiedzy

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Depth profile of the composition of 8 nm Al2O3 thin film

Description

8 nm layer of aluminum oxide (Al2O3) was deposited by ALD method on a s.  Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. To investigate the profile of concenration of elements film was etched by Ar ion gun 5 times. Each etching takes 30 sec. XPS measurements were carried out at room temperature under ultrahigh vacuum conditions and pressures below 1.1 x 10-6 Pa using Omicron NanoScience equipment. Data analysis was performed with the CASA XPS software package using Shirley background subtraction and Gauss-Lorentz curve fitting algorithm by the least-squares method - GL (30). The resulting spectra were calibrated to obtain a binding energy of 285.00 eV for C 1s. 

Dataset file

XPS.zip
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File details

License:
CC BY
Attribution
Raw data:
Data contained in dataset was not processed.

Details

Year of publication:
2021
Verification date:
2021-07-22
Creation date:
2019
Dataset language:
English
Fields of science:
  • Materials engineering (Engineering and Technology)
DOI:
DOI ID 10.34808/92k2-wd31 open in new tab
Verified by:
Gdańsk University of Technology

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