Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel - Open Research Data - Bridge of Knowledge

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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel

Description

The presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg) of the top-gated GFET device. 

In this study the GFET device with 10 μm x 10 μm graphene channel, 10 nm top-gate dielectric and 300 nm SiO2 layer was analyzed. The drift-diffusion approach was employed to calculate self-consistently the I-V behavior of the transistor at initial temperature of 293K. The mobility of the both type of carriers (electrons and holes) was 3000 cm2/(V*s) and the Dirac voltage was 0 V.

Dataset file

GFET_I-V_10um_x_10um.zip
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download file GFET_I-V_10um_x_10um.zip

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License:
Creative Commons: by 4.0 open in new tab
CC BY
Attribution

Details

Year of publication:
2021
Verification date:
2021-03-22
Creation date:
2020
Dataset language:
English
Fields of science:
  • Automation, electronic and electrical engineering (Engineering and Technology)
  • Materials engineering (Engineering and Technology)
  • Physical sciences (Natural sciences)
DOI:
DOI ID 10.34808/g3ag-nf04 open in new tab
Verified by:
Gdańsk University of Technology

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