Piotr Płotka received the M.Sc. and D.Eng. degrees in electronic engineering from the Gdansk University of Technology, Poland, in 1976 and 1985. In 2008 he received D.Sc. (Dr.Hab.) degree, also in electronic engineering, from the Institute of Electron Technology at Warsaw, Poland.

From 1977 he was with Academy of Technology and Agriculture at Bydgoszcz, Poland and from 1981 with the Gdansk University of Technology.  In cooperation with industry he developed a construction and technology for a silicon power transistor family. From 1985 he became an Assistant Professor at the Gdansk University of Technology. His group developed and patented spin-on diffusion sources used by industry for twenty years in production of silicon power diodes, thyristors and transistors.  

In 1990, he joined the Nishizawa Terahertz Project of Research Development Corporation of Japan, Sendai, where he was developing device applications of GaAs molecular layer epitaxy, which is a technology of growing crystal layers with thicknesses of single molecular layers step-by-step. From 1992 to 2008, he worked as a Senior Researcher at the Semiconductor Research Institute, Sendai. He led a group developing nanometer-scale GaAs static induction transistors for application in future communication circuits. The devices with 7-nm channel operated with quantum-mechanical tunneling and/or ballistic transport mechanism of electrons. His group developed also GaAs TUNNETT diode, belonging to the family of transit time diodes, generating 706 GHz wave in a continuous fundamental mode. His group participated in application of these diodes at millimeter- and submillimeter-wave systems. At the same time he was also developing fabrication methods for nanodevices such as area-selective epitaxial regrowth for definition of critical dimensions of the nanodevices independently from resolution of lithography. This method enabled fabrication of the 7-nm transistors despite using of only 1-µm-resolution photolithography.  For the same purpose he developed metal chemical vapor deposition (CVD) techniques combined with semiconductor epitaxial regrowth. He worked on physics of operation of the nanodevices also.

Since 2008 he is again with the Gdansk University of Technology, Poland. He works currently on fabrication and physics of operation of poly- and nano-crystalline diamond devices and sensors for electrochemical applications. He was also engaged in development of nano-sensors and transducers fabricated with semiconductor technologies.

He coauthored five Japanese and two Polish patents. He published over twenty papers in journals from the JCR list. According to the Web of Science his Hirsch index is 9.

He is experienced in teaching undergraduate and graduate courses of:

physics and operation of semiconductor devices;
fundamentals of microelectronics;
integrated circuit technology;
analog circuits;
microelectromechanical systems (MEMS).