A Quasi-2D MOSFET Model — 2D-to-Quasi-2D Transformation

Wiesław Kordalski

doi:10.15199/ele-2014-131

A Quasi-2D MOSFET Model — 2D-to-Quasi-2D Transformation

Abstract

A quasi-two-dimensional (quasi-2D) representation of the MOSFET channel is proposed in this work. The representation lays the foundations for a quasi 2D MOSFET model. The quasi 2D model is a result of a 2D into quasi 2D transformation. The basis for the transformation are an analysis of a current density vector field and such phenomena as Gradual Channel Detachment Effect (GCDE), Channel Thickness Modulation Effect (CTME), and Lengthening Channel Effect (LCE). Basic parameters and quantities necessary for deriving quasi-2D continuity equations, quasi-2D Poisson’s equation, quasi-2D transport equation, as well as development of quasi-2D dc and small-signal models are defined.

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Wiesław Kordalski dr hab. inż.

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Category:: Articles
Type:: artykuły w czasopismach recenzowanych i innych wydawnictwach ciągłych
Published in:: Elektronika : konstrukcje, technologie, zastosowania pages 50 - 52,
ISSN: 0033-2089
Language:: English
Publication year:: 2013
Bibliographic description:: Kordalski W.: A Quasi-2D MOSFET Model — 2D-to-Quasi-2D Transformation// Elektronika : konstrukcje, technologie, zastosowania. -., iss. 9 (2013), s.50-52
DOI:: Digital Object Identifier (open in new tab) 10.15199/ele-2014-131
Verified by:: Gdańsk University of Technology