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Abstract
Unbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier injection and enhance electroluminescence of perovskite light-emitting transistors by independent control of drain–source and gate–source bias voltages to compensate for space-charge effects. Optimization of bias pulse synchronization induces a fourfold enhancement of the emission intensity. Interestingly, the optimal phase delay between biasing pulses depends on modulation frequency due to the capacitive nature of the devices, which is well captured by numerical simulations of an equivalent electrical circuit. These results provide new insights into the electroluminescence dynamics of AC-driven perovskite light-emitting transistors and demonstrate an effective strategy to optimize device performance through independent control of the amplitude, frequency, and phase of the biasing pulses.
Citations
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Authors (5)
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Maciej Klein
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Bryan Hao, Wei
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Annalisa Bruno
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Cesare Soci Associate Professor
Cite as
Full text
- Publication version
- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.1002/aelm.202300270
- License
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Keywords
Details
- Category:
- Articles
- Type:
- artykuły w czasopismach
- Published in:
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Advanced Electronic Materials
no. 9,
pages 1 - 8,
ISSN: 2199-160X - Language:
- English
- Publication year:
- 2023
- Bibliographic description:
- Klein M., Blecharz K., Hao, Wei B., Bruno A., Soci C.: Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors// Advanced Electronic Materials -Vol. 9,iss. 10 (2023), s.1-8
- DOI:
- Digital Object Identifier (open in new tab) 10.1002/aelm.202300270
- Sources of funding:
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- Free publication
- Verified by:
- Gdańsk University of Technology
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