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Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering
Abstract
The paper is focused on a study of formation of TiOxNy thin films prepared by pulsed magnetron sputtering of metallic Ti target. Oxygen and nitrogen were delivered into the discharge in the form of reactive gases O2 and N2. The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. The substrates were on floating potential and thermally stabilized at room temperature during the deposition process. Post-deposition thermal annealing was not employed. The chemical composition from x-ray photoelectron spectroscopy diagnostic reveals formation of TiOxNy structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N element's incorporation into the Ti-O lattice. Decrease in band-gap to values Eg ~ 1.6 eV in TiOxNy thin film is attributed to formed Ti-N bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar+, Ti+, Ti) is presented together with peak discharge current.
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- Category:
- Articles
- Type:
- artykuł w czasopiśmie wyróżnionym w JCR
- Published in:
-
JOURNAL OF PHYSICS D-APPLIED PHYSICS
no. 43,
pages 5203 - 5210,
ISSN: 0022-3727 - Language:
- English
- Publication year:
- 2010
- Bibliographic description:
- Stranak V., Quaas M., Bogdanowicz R., Hartmut S., Hubicka Z., Tichy M., Hippler R.: Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering// JOURNAL OF PHYSICS D-APPLIED PHYSICS. -Vol. 43, nr. Iss. 28 (2010), s.5203-5210
- Verified by:
- Gdańsk University of Technology
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