Role of nitrogen in optical and electrical band gaps of hydrogenated/hydrogen free carbon nitride film - Publication - Bridge of Knowledge

Search

Role of nitrogen in optical and electrical band gaps of hydrogenated/hydrogen free carbon nitride film

Abstract

We report the optical and electrical band gap energy of amorphous hydrogenated carbon nitride (a-HCNx) and carbon nitride (a-CNx) as a function of nitrogen concentration (N/C). The optical band gap of a-HCNx and a-CNx films has been determined by means of Ellipsometry and UV-VIS. Both optical and electrical band gaps increase with elevated nitrogen concentration. Experimentally obtained electrical band gap is compared with the same one calculated from single particle band gap or carbon nanotube model to observe the dependence like behavior. Moreover, resistivity of the a-HCNx film shows a higher value in comparison to that of the a-CNx film as the nitrogen concentration increases from 0.07 to .54 at room temperature.

Citations

  • 8

    CrossRef

  • 8

    Web of Science

  • 8

    Scopus

Cite as

Full text

full text is not available in portal

Keywords

Details

Category:
Articles
Type:
artykuł w czasopiśmie wyróżnionym w JCR
Published in:
THIN SOLID FILMS no. 527, pages 151 - 157,
ISSN: 0040-6090
Language:
English
Publication year:
2013
Bibliographic description:
Majumdar A., Bogdanowicz R., Mukherjee S., Hippler R.: Role of nitrogen in optical and electrical band gaps of hydrogenated/hydrogen free carbon nitride film// THIN SOLID FILMS. -Vol. 527, nr. 1 (2013), s.151-157
DOI:
Digital Object Identifier (open in new tab) 10.1016/j.tsf.2012.11.020
Verified by:
Gdańsk University of Technology

seen 27 times

Recommended for you

Meta Tags