Search results for: emc/emi gallium nitride (gan) wide bandgap devices
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EMI attenuation in a DC-DC buck converter using GaN HEMT
PublicationA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
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EMI mitigation of GaN power inverter leg by local shielding techniques
PublicationThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
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3D PCB package for GaN inverter leg with low EMC feature
PublicationThis paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...
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Scheelite-Type Wide-Bandgap ABO4 Compounds (A = Ca, Sr, and Ba; B = Mo and W) as Potential Photocatalysts for Water Treatment
PublicationIn the present study, alkaline-earth metal scheelite-type compounds ABO4 (A = Ca, Sr, Ba, B = Mo, W) synthesized by a hydrothermal method were systematically studied. The as-obtained photocatalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Brunauer-Emmett-Teller surface area analysis (BET), UV–Vis diffuse reflectance spectroscopy (DR/UV-Vis), photoluminescence, and thermoluminescence (TL)...
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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Conducted emi propagation modelling in the wound components.
PublicationThe modelling of EMC behaviour of power electronics converters require specific models of devices which are adequate in a wide frequency range. A novel equivalent-circuit model of the inductor, suitable for EMC applications, has been developed and validated. The model can be used for the analyses of wounded components' behaviour in the conducted-EMI frequency range. The parameters of the proposed model can be evaluated based on...
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Measurements of radiation emission of a portable power bank with a capacity of 5200 mAh
Open Research DataThe dataset contains the emission measurement results that are part of comprehensive tests carried out for portable power banks with different capacities. The measurements were performed in the frequency range from 30 MHz to 3 GHz using a Gigahertz Transverse Electromagnetic (GTEM) cell. The test setup was configured to measure a portable power bank...
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Measurements of radiation emission of a portable power bank with a capacity of 2600 mAh
Open Research DataThe dataset contains the emission measurement results that are part of comprehensive tests carried out for portable power banks with different capacities. The measurements were performed in the frequency range from 30 MHz to 3 GHz using a Gigahertz Transverse Electromagnetic (GTEM) cell. The test setup was configured to measure a portable power bank...
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Measurements of radiation emission of a portable power bank with a capacity of 10400 mAh
Open Research DataThe dataset contains the emission measurement results that are part of comprehensive tests carried out for portable power banks with different capacities. The measurements were performed in the frequency range from 30 MHz to 3 GHz using a Gigahertz Transverse Electromagnetic (GTEM) cell (Fig. 1). The test setup was configured to measure a portable power...
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Conducted EMI Propagation Paths in DC-AC Hard Switching Converter
PublicationIn order to limit the electromagnetic interference (EMI) in power electronics devices, knowledge about the phenomena connected with EMI generation and propagation is necessary. This papers describes the propagation paths in the 3 phase voltage source inverter using wide-band simulation and laboratory test with the signal processing method Wiener filtering, where the transfer functions between voltage across switches and the perturbation...
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Stanisław Galla dr inż.
PeopleStanisław Galla was born in 1970 in Gdańsk. He graduated from the Secondary Technical School of Mechanical and Electrical Engineering in Gdansk (1990). He studied at the Faculty of Electrical Engineering at Gdansk University of Technology (graduated in 1996). His PhD thesis entitled "Methodology for increasing the accuracy of low frequency measurements of periodic disturbance indicators in low voltage networks" was defended in...
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High Frequency Conducted Emission in AC Motor Drives Fed By Frequency Converters: Sources and Propagation Paths
PublicationProvides a concise and thorough reference for designing electrical and electronic systems that employ adjustable speed drives Electrical and electronic systems that employ adjustable speed drives are being increasingly used in present-day automation applications. They are considered by many application engineers as one of the most interfering components, especially in a contemporarily faced industrial environment. This book fills...
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Modelowanie i symulacja zaburzeń przewodzonych z zastosowaniem programów Saber i TCad = Modeling and simulation of conducted emissions with TCad and Saber programs
PublicationPrzedstawiono symulacyjne badania porównawcze w zakresie kompatybilności elektromagnetycznej EMC modelu obwodowego przetwornicy DC-DC podwyższającej napięcie. Wskazano na specyfikę modelowania wynikającą z potrzeby przewidywania propagacji zaburzeń przewodzonych EMI w szerokim zakresie częstotliwości. Wyznaczono model układu dla symulatora Saber i porównano pomiary charakterystyki widma EMI z wynikami otrzymanymi z symulacji. Zbadano...
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CM Voltage Compensators for Power Electronic Interfaces
PublicationThe experimental results presented in the paper have shown that the application of the PEIs might cause EMC related problems, especially in the case of the application of a group of connected converters. The most convenient way to reduce EMI currents and prevent aggregation of EMI currents introduced by a group of converters is through passive compensation of voltage interference sources inside of the single converters. In the...
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Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublicationGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
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Komputerowe szacowanie zaburzeń elektromagnetycznych
PublicationPrzedstawiono symulacyjne badania porównawcze w zakresie kompatybilności elektromagnetycznej EMC modelu obwodowego przetwornicy DC-DC podwyższającej napięcie. Zbadano wrażliwość uzyskanego modelu na kolejne uproszczenia jego postaci, w ten sposób otrzymując zredukowany, równoważny model do oszacowania charakterystyki widma zaburzeń EMI na sieci sztucznej. Taki model zrealizowano w symulatorze TCad i porównano zgodność wyników symulacji...
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Endohedral gallide cluster superconductors and superconductivity in ReGa5
PublicationWe present transition metal-embedded (T@Gan) endohedral Ga clusters as a favorable structural motif for superconductivity and develop empirical, molecule-based, electron counting rules that govern the hierarchical architectures that the clusters assume in binary phases. Among the binary T@Gan endohedral cluster systems, Mo8Ga41, Mo6Ga31, Rh2Ga9, and Ir2 Ga9 are all previously known superconductors. The well-known exotic superconductor...
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The conducted EMI in DC-DC converters
PublicationThis book presents the phenomena of conducted electromagnetic interference (EMI) generation in DC-DC converters. The measurement and simulation are used to analyze the impact of the most important parameters on the character, level and propagation path of interference. In this book, the analysis of the interference generation and propagation is presented on the example of three basic converters. The wide banded behavior of all...
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Układy sterowania bramkowego tranzystorów z węglika krzemu SiC JFET w falownikach napięcia
PublicationZastosowanie technologii węglika krzemu (SiC) w falownikach napięcia pozwala na zwiększenie częstotliwości przełączeń oraz temperatury pracy przyrządów półprzewodnikowych. W celu zapewnienia minimalizacji strat oraz określonych właściwości dynamicznych tranzystorów z węglika krzemu wymagane jest stosowanie zaawansowanych układów sterowania bramkowego. W referacie przedstawiono analizę teoretyczną, wyniki badań symulacyjnych oraz...
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Trójfazowy falownik napięcia z tranzystorami SiC JFET
PublicationW referacie przedstawiono konstrukcję oraz wyniki badań trójfazowego falownika napięcia zbudowanego z wykorzystaniem diod Schottky oraz tranzystorów JFET z węglika krzemu (SiC). Znacznie krótsze czasy przełączeń tych elementów w porównaniu z tranzystorami IGBT i diodami na bazie krzemu (Si) umożliwiają pracę układu z częstotliwością 100 kHz i wyższą. Małe energie przełączeń oraz mała rezystancja drenu tranzystorów SiC JFET pozwalają...