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Punkty Ministerialne: Pomoc
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Prace opublikowane w tym czasopiśmie
The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets: Tuning the diamond-on-graphene vertical junctionPublikacja
In this paper, the effect of boron doping on the electrical, morphological and structural properties of free-standing nanocrystalline diamond sheets (thickness ~ 1 μm) was investigated. For this purpose, we used diamond films delaminated from a mirror-polished tantalum substrate following a microwave plasma-assisted chemical vapor deposition process, each grown with a different [B]/[C] ratio (up to 20,000 ppm) in the gas phase....
Incorporation of nitrogen in diamond films – A new way of tuning parameters for optical passive elementsPublikacja
This paper investigates the impact of nitrogen incorporation in diamond films for the construction of an interferometric sensor to measure displacement. Diamond films with different nitrogen levels (0–5%) were deposited on silicon substrates by microwave plasma enhanced chemical vapor deposition. The structural characteristics of these samples are characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), confocal...
Functionalization of graphene oxide coatings with phosphorus atoms and their corrosion resistance in sodium chloride environmentPublikacja
In this work, we compared corrosion resistance of graphene oxide, and phosphorus functionalized reduced graphene oxide coatings obtained as a result of electrophoretic deposition on the copper substrate. Doping graphene oxide with phosphorus atoms was performed by a hydrothermal method in the presence of different amounts of phosphoric acid. Structural studies confirmed the insertion of phosphorus atoms into the graphene oxide...
Incorporation of nitrogen in diamond films - A new way of tuning parameters for optical passive elementsPublikacja
This paper investigates the impact of nitrogen incorporation in diamond films for the construction of an interferometric sensor to measure displacement. Diamond films with different nitrogen levels (0–5%) were deposited on silicon substrates by microwave plasma enhanced chemical vapor deposition. The structural characteristics of these samples are characterized using scanning electron microscopy (SEM), atomic force microscopy...
The boron-doped diamond thin films were growth in deuterium rich microwave plasma in CVD process. The mechanism of influence of plasma composition on boron doping level was studied using optical emission spectroscopy. Deuterium rich plasma results in an increased dissociation of B2H6 precursor and intense boron-radicals' production. In consequence, a higher doping level of diamond films was observed by means of Laser Induced Breakdown...
Selected papers from the Smart Engineering of New Materials Conference, 22-25 June 2015, Lodz, PolandPublikacja
Editorial to the special issue is a collection of the articles presented at Smart Engineering of New Materials (SENM2015) Conference, held in Lodz, Poland on June 22-25, 2015 (SENM 2015).
The novel fiber-optic low coherence sensor with thin diamond films is demonstrated. The undoped and boron-doped diamond films were elaborated by the use of the microwave plasma enhanced chemical vapor deposition (μPE CVD) system. The optical signal from the Fabry–Pérot cavity made with the application of those thin films is sensitive to displacement. The sensor characterization was made in the range of 0–600 μm. The measurements...
Improved surface coverage of an optical fibre with nanocrystalline diamond by the application of dip-coating seedingPublikacja
Growth processes of diamond thin films on the fused silica optical fibres (10 cm in length) were investigated at various temperatures. Fused silica pre-treatment by dip-coating in a dispersion consisting of detonation nanodiamond (DND) in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) was applied. Nanocrystalline diamond (NCD) films were deposited on the fibres using the microwave plasma assisted chemical vapour deposition...
Influence of the boron doping level on the electrochemical oxidation of the azo dyes at Si/BDD thin film electrodesPublikacja
In this study the efficiency of electrochemical oxidation of aromatic pollutants, such as reactive dyes, at boron-doped diamond on silicon (Si/BDD) electrodes was investigated. The level of [B]/[C] ratio which is effective for the degradation and mineralization of selected aromatic pollutants, and the impact of [B]/[C] ratio on the crystalline structure, layer conductivity and relative sp3/sp2 coefficient of a BDD electrode were...
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