dr inż. Marek Turzyński
The paper presents results on behavior modeling of general purpose Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady-state and in switching conditions. Methods of parameters extraction including nonlinearity of parasitic capacitances and steady-state characteristics are based on manufacturer data sheet and externally measurable characteristics....
In this paper the predictive estimation based control strategy for a quasi-resonant dc link inverter (PQRDCLI) is developed. Instead of direct measurement of dc link input inverter current – its estimation with one step prediction is applied. The PQRDCLI fed induction motor, controlled with a predictive current estimation stabilized inverter output voltage slopes independently of load. Moreover, reduction of overvoltage spikes...
A top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could...
Uzyskane stopnie/tytuły naukowe
Nadanie stopnia naukowegodr inż. Elektrotechnika (Dziedzina nauk technicznych)
wyświetlono 382 razy