Informacje szczegółowe
- Akronim projektu:
- 2DMs
- Program finansujący:
- OPUS
- Instytucja:
- Narodowe Centrum Nauki (NCN) (National Science Centre)
- Porozumienie:
- UMO-2019/35/B/ST7/02370 z dnia 2020-10-01
- Okres realizacji:
- 2020-10-02 - 2024-09-30
- Kierownik projektu:
- prof. dr hab. inż. Janusz Smulko
- Realizowany w:
- Katedra Metrologii i Optoelektroniki
- Instytucje zewnętrzne
biorące udział w projekcie: -
- Instytut Wysokich Ciśnień Polskiej Akademii Nauk (Polska)
- Wartość projektu:
- 928 680.00 PLN
- Typ zgłoszenia:
- Krajowy Program Badawczy
- Pochodzenie:
- Projekt krajowy
- Weryfikacja:
- Politechnika Gdańska
Publikacje powiązane z tym projektem
Filtry
wszystkich: 4
Katalog Projektów
Rok 2023
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Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublikacjaExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
Rok 2022
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Combined chemoresistive and in situ FTIR spectroscopy study of nanoporous NiO films for light-activated nitrogen dioxide and acetone gas sensing
PublikacjaThe chemoresistive sensor response of nanoporous NiO films prepared by advanced gas deposition was investigated by combined resistivity and in situ FTIR spectroscopy, with and without simultaneous light illumination, to detect NO2 and acetone gases. The sensitivity towards NO2 increased dramatically under UV irradiation employing 275 nm light. Improved sensitivity was observed at an elevated temperature of 150 °C. In situ FTIR...
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublikacjaThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
Rok 2021
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Pulsed UV-irradiated Graphene Sensors for Ethanol Detection at Room Temperature
PublikacjaA graphene-based gas sensor fabricated in a FET (GFET) configuration and its sensitivity towards ethanol and methane is reported. Detection of ethanol at the level of 100 ppm was observed under pulsed UV irradiation and after cleaning by UV light in the N2 ambient. Reduction of the frequency of UV irradiation pulses resulted in increased changes in sensor resistance in the presence of ethanol. Improved sensing behavior was ascribed...
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