Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application - Publikacja - MOST Wiedzy

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Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application

Abstrakt

Poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In present work, GaN nanowires with diameters of 25-50 nm and two lengths (200 and 500 nm) have been grown using molecular beam epitaxy technique. Solar-grade monocrystalline silicon wafers were used as substrates for nanowire synthesis. GaN nanostructures were incorporated into P3HT:PCBM photoactive layer in order to facilitate charge transfer between P3HT:PCBM and Si. Samples with and without nanowires were compared. Addition of nanowires led to improvement in photovoltaic performance. Open circuit voltage has risen by 72% and short circuit current density – by 200%. Rs have decreased 50 times and PCE rose 20.7 times. Additional maxima could be observed in photocurrent spectrum corresponding to carriers being generated near GaN absorption edge. Moreover, External Quantum Efficiency pikes near GaN absorption edge, indicating the formation of current transfer channel via P3HT/GaN/Si cascade heterojunction. Mechanism explaining source of abovementioned improvement is proposed.

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Kategoria:
Publikacja w czasopiśmie
Typ:
artykuły w czasopismach
Opublikowano w:
JOURNAL OF NANOPARTICLE RESEARCH nr 22, strony 1 - 9,
ISSN: 1388-0764
Język:
angielski
Rok wydania:
2020
Opis bibliograficzny:
Tchutchulashvili G., Korona K., Mech W., Chusnutdinow S., Sobanska M., Klosek K., Zytkiewicz Z., Sadowski W.: Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application// JOURNAL OF NANOPARTICLE RESEARCH -Vol. 22,iss. 4 (2020), s.1-9
DOI:
Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1007/s11051-020-04797-8
Weryfikacja:
Politechnika Gdańska

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