Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering. - Publikacja - MOST Wiedzy

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Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering.

Abstrakt

Iron oxide films were deposited using high power impulse magnetron sputtering (HiPIMS) of an iron cathode in an argon/oxygen gas mixture at different gas pressures (0.5~Pa, 1.5~Pa, and 5.0~Pa). The HiPIMS system was operated at a repetition frequency $f = 100$~Hz with a duty cycle of 1~\%. A main goal is a comparison of film growth during conventional and electron cyclotron wave resonance-assisted HiPIMS. The deposition plasma was investigated by means of optical emission spectroscopy and energy-resolved mass spectrometry. Active oxygen species were detected and their kinetic energy was found to depend on the gas pressure. Deposited films were characterized by means of spectroscopic ellipsometry and grazing incidence x-ray diffraction. Optical properties and crystallinity of as-deposited films were found to depend on the deposition conditions. Deposition of hematite iron oxide films with the HiPIMS-ECWR discharge is attributed to the enhanced production of reactive oxygen species.

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Vitezslav Stranak, Zdenek Hubicka, Martin Cada, Robert Bogdanowicz, Harm Wulff, Christine Helm, Rainer Hippler. (2018). Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering., 51(9), 1-12. https://doi.org/10.1088/1361-6463/aaa9e6

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Informacje szczegółowe

Kategoria:
Publikacja w czasopiśmie
Typ:
artykuł w czasopiśmie wyróżnionym w JCR
Opublikowano w:
JOURNAL OF PHYSICS D-APPLIED PHYSICS nr 51, strony 1 - 12,
ISSN: 0022-3727
Język:
angielski
Rok wydania:
2018
Opis bibliograficzny:
Stranak V., Hubicka Z., Cada M., Bogdanowicz R., Wulff H., Helm C., Hippler R.: Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering.// JOURNAL OF PHYSICS D-APPLIED PHYSICS. -Vol. 51, nr. 9 (2018), s.1-12

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