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Laser reflectance interferometry system with a 405 nm laser diode for in-situ measurement of CVD diamond thickness
Abstrakt
In situ monitoring of the thickness of thin diamond films during technological processes is important because it allows better control of deposition time and deeper understanding of deposition kinetics. One of the widely used techniques is laser reflectance interferometry (LRI) which enables non-contact measurement during CVD deposition. The authors have built a novel LRI system with a 405 nm laser diode which achieves better resolution compared to the systems based on He-Ne lasers, as reported so far. The system was used for in situ monitoring of thin, microcrystalline diamond films deposited on silicon substrate in PA-CVD processes. The thickness of each film was measured by stylus profilometry and spectral reflectance analysis as a reference. The system setup and interferometric signal processing are also presented for evaluating the system parameters, i.e. measurement uncertainty, resolution and the range of measurable film thickness.
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Informacje szczegółowe
- Kategoria:
- Publikacja w czasopiśmie
- Typ:
- artykuł w czasopiśmie wyróżnionym w JCR
- Opublikowano w:
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Metrology and Measurement Systems
nr XX,
strony 543 - 554,
ISSN: 0860-8229 - Język:
- angielski
- Rok wydania:
- 2013
- Opis bibliograficzny:
- Kraszewski M., Bogdanowicz R.: Laser reflectance interferometry system with a 405 nm laser diode for in-situ measurement of CVD diamond thickness// Metrology and Measurement Systems. -Vol. XX, nr. 4 (2013), s.543-554
- Weryfikacja:
- Politechnika Gdańska
wyświetlono 141 razy