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Storing Matter’technique in SIMS depth profile analysis

Abstrakt

Secondary ion mass spectrometry (SIMS) is a very useful technique for the analysis of layered systems. It is based on the primary ion beam sputtering of solids and mass analysis of the emitted secondary ions. A main limitation of this technique results from the direct quantitative analysis, since the ionization efficiency of a given atom is highly influenced by the neighbouring atoms at the surface. This phenomenon is known as the ‘matrix effect’. This problem can be partially solved by separation of the sputtering and ionization processes. The ‘Storing Matter’ technique involves deposition of the sputtered matter onto a rotating collector. Subsequently, ionisation occurs during the ion beam bombardment of the stored matter. In case of sputtering of a given layered structure, the stored matter deposit presents the sequence of the deposition process and the analysis of this deposit reflects the investigated structure. We analyse a set of on oxidized steel samples and oxidized steel covered by aluminium. These types of structures are known for strong matrix effects at the metal oxide interfaces. The results of the ‘Storing Mater’ analyses are compared with the results of the classical SIMS analysis.

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Kategoria:
Publikacja w czasopiśmie
Typ:
artykuł w czasopiśmie wyróżnionym w JCR
Opublikowano w:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS nr 450, strony 153 - 156,
ISSN: 0168-583X
Język:
angielski
Rok wydania:
2019
Opis bibliograficzny:
Miśnik M., Piotr K., Aleksander Z., Joahim A.: Storing Matter’technique in SIMS depth profile analysis// NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. -Vol. 450, (2019), s.153-156
DOI:
Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1016/j.nimb.2018.05.017
Weryfikacja:
Politechnika Gdańska

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