Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides - Publikacja - MOST Wiedzy

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Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides

Abstrakt

Extending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties can be combined into light-enhanced field-effect transistor gas sensors. We demonstrated prototype zirconium trisulfide (ZrS3) sensors for nitrogen dioxide, ethanol, and acetone. Photoconductivity and photogating play a critical role in photoinduced gas sensing, with the dominance of the first for blue (470 nm) and green (515 nm) and the second one prevailing for red (700 nm) irradiations. Our results suggest that surface trap states lead both to trapping and scattering of the charge carriers in the channel. The gas detection is guided by charge transfer and modulation of the carrier mobility, resulting in distinct I-V characteristics for selected irradiation conditions.

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Informacje szczegółowe

Kategoria:
Publikacja w czasopiśmie
Typ:
artykuły w czasopismach
Opublikowano w:
Materials Today Communications nr 34,
ISSN: 2352-4928
Język:
angielski
Rok wydania:
2023
Opis bibliograficzny:
Drozdowska K., Rehman A., Rumyantsev S., Wurch M., Bartels L., Balandin A., Smulko J., Cywiński G.: Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides// Materials Today Communications -Vol. 34, (2023), s.105379-
DOI:
Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1016/j.mtcomm.2023.105379
Źródła finansowania:
Weryfikacja:
Politechnika Gdańska

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