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Wyniki wyszukiwania dla: DIELECTRIC SUBSTRATE, LOW-LOSS SUBSTRATE, DIELECTRIC CONSTANT, DIELECTRIC MEASUREMENT
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TEM and EDX study of the Al2O3 ultra thin films
Dane BadawczeThe ultra-thin layers of Al2O3 were deposited on a silicon substrates. The method of atomic layer deposition (Beneq TFS 200 ALD system) was chosen as the proper method of dielectric layer deposition. This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water....
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Nanostructures fabrication with use of electrical AFM litography
Dane BadawczeIn the last 10 years, one of the nanotechnological trends has been observed, consisting in the development of new variants of computer memory systems with high capacity and speed of access, using quantum dots. One of the techniques for creating nanodots and other nanostructures is based on the use of an atomic force microscope acting as a lithographic...
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Dielectric properties of barium-vanadate glasses
Dane BadawczeThe linear impedance of barium-vanadate glasses was measured. Samples of the composition of xBaO-(100-x)V2O5 where x= 30, 40 and 45 (in %mol) were prepared by the conventional melt quenching technique. Appropriate amounts of reagents: BaO (≥99.9%, P.P.H STANLAB Sp.J.) and V2O5 (≥99.9%, POCH) were thoroughly mixed in an agate mortar. The melting was...
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Broadband dielectric spectroscopy studies of multiple times processed poly(lactic acid)-carbon black composites
Dane BadawczeThis dataset contains broadband dielectric spectroscopy studies of commercially available ProtoPasta 3D printable filament, composed of poly-lactic acid (PLA) and conductive carbon black (CB) filler. The aim of the study is to observe structural differences and applied properties changes under multiple reprocessing of the composite material at different...
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SEM micrographs of V2O5 thin film morphology dependent on substrate types
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin film morphology dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h. The results show that the morphology of...
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Interface diffusion between metallic nanoparticles and silicon substrate
Dane BadawczeInterface diffusion between metallic nanoparticles and silicon substrate was detected by EDX method. Metallic nanostructures were manufactured by thermal annealing of thin films. Gold and silver nanostructures were chosen for measurements. Samples were annealed for 15 and 60 minutes at 550 deg.
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XRD patterns of V2O5 thin film morphology dependent on substrate types
Dane BadawczeThe DataSet contains the XRD patterns of the V2O5 thin film structure dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h.
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Depth XPS profile of Fe-S layers on a titanium substrate
Dane BadawczeDepth XPS profile of Fe-S layers on a titanium substrate was measured. Material was etched by Argon ion gun and measured by XPS method. For each sample, three times per 10 minutes each was sputtered.
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Polyacrylamide substrate viscosity impact on temozolomide activity in glioblastoma cells by flow cytometry and rheological measurements
Dane BadawczeDataset includes raw data on cell lines LN-229 and LN-18 treated with temozolomide measured by flow cytometry, rheometry and cell projections. It also includes calculations necessary for creation of figures and conclusions based on those figures in the publication titiled: "Substrate viscosity impairs temozolomide-mediated inhibition of glioblastoma...
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XRD patterns of V2O5 thin films deposited on silicon substrate
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range of 300-600C. The results show that the structure of the films dependent on the annealing temperature.
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SEM micrographs of morphology evolution of V2O5 thin films on silicon substrate
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 250-600C. The results show that the morphology of the films dependent on the annealing temperature.
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Mechanical lithography in a polymer substrate using AFM in contact mode
Dane BadawczeMechanical lithography in a polymer substrate. Contact mode. NTEGRA Prima (NT-MDT) device. NSG 01 probe.
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Morphology and structure of V2O5 nanorods deposited on the silicon substrate after reduction
Dane BadawczeThe DataSet contains the XRD patterns and SEM micrographs of V2O5 nanorods on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 500C for 40 under a reducing atmosphere (94% Ar, 6% H2).
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Substrate characterization in a electrochemically derived Manganium-Cobaltium thin films
Dane BadawczeManganium-Cobaltium thin films were electrochemically deposited on a Ni foams subsrates in a one-step process at −1.1 V vs. Ag/AgCl in an aqueous solution of differently concentrated Mn(NO3)2·4H2O and Co(NO3)2·6H2O with the deposition time limited by charges of 60, 120, and 200 mC at 25 °C. The concentration ratios of Mn(NO3)2·4H2O to Co(NO3)2·6H2O...
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Distance measurement by the low coherent interferometer
Dane BadawczeThe obtained data was acquired by the interferometric fiber-optic sensor of distance. The setup was constructed of a broadband light source working at the central wavelength of 1560 nm, an optical spectrum analyzer and a fiber-optic 2x1 coupler (with the power split 50:50). All elements were connected by standard single-mode optical fibers. The measurement...
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SEM images of symmetrical cell interface with SrTi0.30Fe0.70O3-d electrode and CGO-20 substrate in function of sintering temperature
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.30Fe0.70O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
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SEM images of symmetrical cell interface with SrTi0.65Fe0.35O3-d electrode and CGO-20 substrate in function of sintering temperature
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.65Fe0.35O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
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SEM images of symmetrical cell interface with SrTi0.50Fe0.50O3-d electrode and CGO-20 substrate in function of sintering temperature
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.50Fe0.50O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
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Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under...
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SEM images of symmetrical cell interface with SrTi1-xFexO3-d electrodes and CGO-20 substrate sintered at 800 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi1-xFexO3-d (x=0.35; 0.50; 0..70) electrodes and CGO-20 substrate sintered at 800 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage of 12 kV in a high vacuum...
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Structure evolution of V2O5 thin films deposited on quartz glass substrate - High-Temperature X-ray Diffraction
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on guartz glass. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the quartz glass substrate. The structure was measured in-situ during heating between 50-800°C under synthetic...
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Exemplary SEM images of polished cross sections of symmetrical cell with SrTi0.50Fe0.50O3-d electrodes and CGO-20 substrate sintered at 800 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell with SrTi0.50Fe0.50O3-d electrodes and CGO-20 substrate sintered at 800 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage of 12 kV in a high vacuum mode.
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Results of SEM examination of chitosan/Eudragit E 100 coatings electrophoretically deposited on the Ti grade 2 substrate
Dane BadawczeThe database contains the images of the microstructure of the coatings observed with the SEM scanning electron microscope. The chitosan/Eudragit E 100 coatings deposited on the Ti grade 2 substrate by an electrophoresis process were tested. Different process parameters like Eudragit E 100 concentration (0.25 g and 0.5 g in 100 mL of 1% (v/v) acetic...
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SEM images of symmetrical cell interface with Sr1.05Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with Sr1.05Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
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SEM images of symmetrical cell interface with Sr1.00Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with Sr1.00Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
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SEM images of symmetrical cell interface with Sr0.90Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with Sr0.90Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
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SEM images of symmetrical cell interface with Sr0.95Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with Sr0.95Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
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Distance measurement by the low coherent interferometer with NND layer (the source wavelegth 1310 nm)
Dane BadawczeThe obtained data was acquired by the interferometric fiber-optic sensor of distance. The setup was constructed of a broadband light source working at the central wavelength of 1310 nm, an optical spectrum analyzer, and a fiber-optic 2x1 coupler (with the power split 50:50). All elements were connected by standard single-mode optical fibers. The measurement...
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The AFM micrographs of gold nanoparticles on silicon substrate
Dane BadawczeThe dataset contains the first approach towards AFM topographic imaging of gold nanoparticles synthesized and immobilized on the silicon surface. Measurements were made in the semi-contact mode on the NTEGRA Prima device, manufactured by NT-MDT. Scans were performed with amplitude detection at an operating value of 60% of the free oscillation amplitude....
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Oxygen partial pressure and temperature dependence of low frequency capacitance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of low frequency capacitance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
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Oxygen partial pressure and temperature dependence of low frequency resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of low frequency resistance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
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Ultra-thin film of aluminum oxide influence on the plasmon resonance in gold nanostructures
Dane BadawczeUltra-thin film of aluminum oxide influence on the plasmon resonance in gold nanostructures was measured by UV-VIS spectroscopy. Ultra thin film of Al2O3 was deposited on a gold nanostructures. Thickness of film was 2nm - 8nm. Shift of plasmon resonance was observed, as a result of various dielectric constant of layer.
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XRD patterns of vanadium oxide nanostructures on silicon substrate obtained by V2O5 recrystallization
Dane BadawczeThe DataSet contains the XRD patterns of vanadium oxide nanostructures on silicon substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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Integrated circuit structure surface images obtained with contact capacitive imaging technique
Dane BadawczeThe measurements were done using NTEGRA Prima (NT-MDT) device. CSG 10Pt probe.
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XRD patterns of vanadium oxide nanostructures on quartz glass substrate obtained by V2O5 recrystallization
Dane BadawczeThe DataSet contains the XRD patterns of vanadium oxide nanostructures on quartz glass substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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Oxygen partial pressure and temperature dependence of Gerischer element of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of Gericher element at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C)and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent circuit...
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Oxygen partial pressure and temperature dependence of series resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of series resistance (R) at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
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Oxygen partial pressure and temperature dependence of series resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element series resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Au nanostructures coated with a ultrathin film of Al2O3 - measurements and FDTD simulations
Dane BadawczeGold plasmonic platforms have been coated with an ultra-thin films of aluminium oxide. Optical measurements, showing the influence of the thickness of Al2O3 on plasmon resonance position. The observed red-shift of the resonance location with the increase of the thickness of the Al2O3 film, can be explained by the change in the dielectric function of...
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Oxygen partial pressure and temperature dependence of middle frequency capacitance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of middle frequency capacitance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
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Oxygen partial pressure and temperature dependence of middle frequency resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of middle frequency resistance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
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Oxygen partial pressure and temperature dependence of R-CPE1 resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE1 resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Oxygen partial pressure and temperature dependence of R-CPE2 frequency of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE2 frequency at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Oxygen partial pressure and temperature dependence of R-CPE1 capacity of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE1 capacity at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Oxygen partial pressure and temperature dependence of R-CPE1 frequency of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE1 frequency at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Oxygen partial pressure and temperature dependence of R-CPE2 resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE2 resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Oxygen partial pressure and temperature dependence of R-CPE2 capacity of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE2 capacity at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Linear impedance of Bi2VO5.5 glass-ceramic measured with impedance spectroscopy method at low temperature region
Dane BadawczeThe linear electrical properties of Bi2VO5.5 glass-ceramic prepared by traditional melt quenching technique was measured by impedance spectroscopy method.
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Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method
Dane BadawczeThin films were prepared by radio frequency reactive magnetron sputtering technique. Metallic Te target was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate was heated at 200 °C. The distance between sputtered target and the Corning 1737...
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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel
Dane BadawczeThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...