Wyniki wyszukiwania dla: BUCK CONVERTER - MOST Wiedzy


Wyniki wyszukiwania dla: BUCK CONVERTER

Wyniki wyszukiwania dla: BUCK CONVERTER

  • Wideband Modeling of DC-DC Buck Converter with GaN Transistors


    The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...

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  • EMI attenuation in a DC-DC buck converter using GaN HEMT

    A dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...

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  • Design and experimental validation of a single-stage PV string inverter with optimal number of interleaved buck-boost cells.


    - ENERGIES - Rok 2021

    Increasing converter power density is a problem of topical interest. This paper discusses an interleaved approach of the efficiency increase in the buck-boost stage of an inverter with unfolding circuit in terms of losses in semiconductors, output voltage ripples and power density. Main trends in the power converter development are reviewed. A losses model was designed and used for the proposed solution to find an optimal number...

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  • Comparison of Impedance-Source Networks for Two and Multilevel Buck–Boost Inverter Applications

    • O. Husev
    • F. Blaabjerg
    • C. Roncero-Clemente
    • E. Romero-Cadaval
    • D. Vinnikov
    • Y. Siwakoti
    • R. Strzelecki


    mpedance-source networks are an increasingly popular solution in power converter applications, especially in single-stage buck-boost power conversion to avoid additional front-end dc-dc power converters. In the survey papers published, no analytical comparisons of different topologies have been described, which makes it difficult to choose the best option. Thus, the aim of this paper is to present a comprehensive analytical comparison...

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  • Performance Comparison of a 650 V GaN SSFET and CoolMOS

    The new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....

  • Performance Evaluation of a 650V E-HEMT GaN Power Switch


    - Rok 2015

    GaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...