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Description
Graphene oxides based films were measured by X-ray photoemission spectroscopy (XPS) method. TheXPS measurements were carried out with the Omicron NanoTechnology UHV equipment. The hemispherical spectrophotometer was equipped with a 128-channel collector. The XPS measurements were performed at room temperature at a pressure below 1.1 × 10−8 mBar. The photoelectrons were excited by an Mg-Kα X-Ray source. The X-ray source was operated at 15 kV and a power of 300 W. Obtained results were analyzed by CasaXPS software. For measurements thin films deosited on a PCB board of the pure graphene oxide (GO), reduced graphene oxide (rGO) and functionalized by S and N elements graphene oxide were selected. Nitrogen doped graphene oxide was synthesized by the hydrthermal method. O1s, C1s, N1s and S2phigh resolution spectra were recorded.
Dataset file
hexmd5(md5(part1)+md5(part2)+...)-{parts_count} where a single part of the file is 512 MB in size.Example script for calculation:
https://github.com/antespi/s3md5
File details
- License:
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open in new tab
CC BYAttribution - Raw data:
- Data contained in dataset was not processed.
- Software:
- origin
Details
- Year of publication:
- 2021
- Verification date:
- 2021-07-20
- Creation date:
- 2019
- Dataset language:
- English
- Fields of science:
-
- materials engineering (Engineering and Technology)
- DOI:
- DOI ID 10.34808/jkqt-rz26 open in new tab
- Verified by:
- Gdańsk University of Technology
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