Strength in weakness: Nitrile and thiazolothiazole complexes as new materials for filamentary memristors - Project - Bridge of Knowledge

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Strength in weakness: Nitrile and thiazolothiazole complexes as new materials for filamentary memristors

Memristors are passive electronic elements with two important features: memory (both nonvolatile and fading) and synapse-like plasticity. In most cases the devices are based on unconventional semiconducting materials, and hence they have unique electrical properties, including memory features. The current proposal is meant as a part of the quest for novel materials and elements with unique, memory-like features and improved performance with prospective application in neuromorphic computing. The main goal of the project is the development of a new strategy for fabrication of high performance, non-volatile memristors based on flexible materials. In order to this principal goal two intermediate goals must be achieved: (i) development of new materials capable of formation of conductive filaments on electrical stimulation and (ii) design and development of appropriate device structures for stable, forming-less memristive performance. In order to fulfil all these requirements the proposal will focus on several classes of silver and copper complexes. These metals offer rather high reduction potentials (additionally, copper offers CuII/CuI redox process, which may be also relevant from the point of view of resistive switching) and form complexes of moderate stability with different N-donating ligands.

Details

Financial Program Name:
OPUS
Organization:
Narodowe Centrum Nauki (NCN) (National Science Centre)
Agreement:
UMO-2022/47/B/ST4/00728 z dnia 2023-06-02
Realisation period:
unknown - unknown
Research team leader:
prof. dr hab. inż. Anna Dołęga
Realised in:
Department of Inorganic Chemistry
External institutions
participating in project:
  • Akademia Górniczo-Hutnicza (Poland)
Request type:
National Research Programmes
Domestic:
Domestic project
Verified by:
Gdańsk University of Technology

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