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Abstract
The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher sp2 /sp3 ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed.
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Authors (8)
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Kazimierz Paprocki
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Kazimierz Fabisiak
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Elżbieta Staryga
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Mirosław Szybowicz
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Magdalena Kowalska
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Agnieszka Banaszak-Piechowska
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Full text
- Publication version
- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.1007/s10853-017-1217-0
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- Category:
- Articles
- Type:
- artykuł w czasopiśmie wyróżnionym w JCR
- Published in:
-
JOURNAL OF MATERIALS SCIENCE
no. 52,
edition 17,
pages 10119 - 10126,
ISSN: 0022-2461 - Language:
- English
- Publication year:
- 2017
- Bibliographic description:
- Paprocki K., Fabisiak K., Bogdanowicz R., Gołuński Ł., Staryga E., Szybowicz M., Kowalska M., Banaszak-Piechowska A.: Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films// JOURNAL OF MATERIALS SCIENCE. -Vol. 52, iss. 17 (2017), s.10119-10126
- DOI:
- Digital Object Identifier (open in new tab) 10.1007/s10853-017-1217-0
- Verified by:
- Gdańsk University of Technology
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