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Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition

Abstract

The influence of N2 concentration (1%–8%) in CH4/H2/N2 plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 6 0.25 at 550 nm) and extinction coefficient (0.05 6 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH4/H2 plasma contained micron-sized diamond grains, the films grown using CH4/H2/(4%)N2 plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

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DOI:
Digital Object Identifier (open in new tab) 10.1063/1.4953779
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Copyright (2016 AIP Publishing)

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Category:
Articles
Type:
artykuł w czasopiśmie wyróżnionym w JCR
Published in:
APPLIED PHYSICS LETTERS no. 108, pages 1 - 5,
ISSN: 0003-6951
Language:
English
Publication year:
2016
Bibliographic description:
Ficek M., Sankaran K., Ryl J., Bogdanowicz R., Lin I., Haenen K., Darowicki K.: Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition// APPLIED PHYSICS LETTERS. -Vol. 108, (2016), s.1-5
DOI:
Digital Object Identifier (open in new tab) 10.1063/1.4953779
Verified by:
Gdańsk University of Technology

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