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GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon
Abstract
Abstract: We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance limitations of the organic active layer. The dependence of photovoltaic performance enhancement on the morphology of the nanostructure with nanowire diameters 30, 50, 60, 100 and 150 nm was studied in detail. The short circuit current was enhanced by a factor of 4.25, while an open circuit voltage increase by 0.32 volts was achieved compared to similar planar layers.
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Authors (8)
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Sergij Chusnutdinow
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Wojciech Mech
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Krzysztof P. Korona
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Anna Reszka
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Marta Sobanska
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Zbigniew R. Zytkiewicz
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Full text
- Publication version
- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.3390/ma13214755
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Details
- Category:
- Articles
- Type:
- artykuły w czasopismach
- Published in:
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Materials
no. 13,
ISSN: 1996-1944 - Language:
- English
- Publication year:
- 2020
- Bibliographic description:
- Tchutchulashvili G., Chusnutdinow S., Mech W., Korona K. P., Reszka A., Sobanska M., Zytkiewicz Z. R., Sadowski W.: GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon// Materials -Vol. 13,iss. 21 (2020), s.4755-
- DOI:
- Digital Object Identifier (open in new tab) 10.3390/ma13214755
- Verified by:
- Gdańsk University of Technology
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