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On the tendency of temperature and electric field dependences of interface recombination in P3HT:PCBM organic bulk heterojunction solar cells
Abstract
We demonstrate theoretical explanation of the temperature and electric field dependences of recombination coefficients in an organic P3HT:PCBM bulk heterojunction solar cell. Based onthe model of interface recombination, two analytical formulas describing the relative ratio of the interface (γI ) to the Langevin (γL) recombination coefficients have been derived. Our analysis indicates that the sign of parameters φT and φF determines the increasing or decreasing of γI /γL with temperature and electric field. We have obtained satisfactory agreement between theoretical calculations and experimental data. Additionally, the presented model is capable of explaining, for the first time, the fact that the ratio of the experimental recombination coefficient with sum of charge carrier mobilities increases with electric field.
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- Category:
- Articles
- Type:
- artykuł w czasopiśmie wyróżnionym w JCR
- Published in:
-
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
no. 26,
ISSN: 0268-1242 - Language:
- English
- Publication year:
- 2011
- Bibliographic description:
- Szmytkowski J.: On the tendency of temperature and electric field dependences of interface recombination in P3HT:PCBM organic bulk heterojunction solar cells// SEMICONDUCTOR SCIENCE AND TECHNOLOGY. -Vol. 26, nr. Iss. 10 (2011),
- Verified by:
- Gdańsk University of Technology
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