Abstract

Purpose: The aim of this paper is to show influence of doping 1,4-phenylene-methylenenitrilo-1,4-phenylenenitrilomethylene (PPI) with iodine and to propose doping mechanism and its impact on electronicstructure of doped PPI thin films.Design/methodology/approach: Influence of iodine doping on electronic structure of polyazomethine thinfilms was investigated. Optical absorption spectra, XRD spectra and AFM images of doped PPI thin films wererecorded.Findings: Doping mechanism relys on removing one electron from PPI π-system by I2 molecules and formingcounterions I3-. Formation of positive polaron means that doping of polyazomethine PPI is p – type.Research limitations/implications: Influence of iodine doping on electrical properties (with increasing oftempearture) of PPI thin layers will be checking with Kethley appliance. We plan these measurements to bedone in the foreseeable future.Practical implications: Iodine doping of thin PPI films process could results in better electrical conductivity ofPPI, so doped polyazomethine films could find some applications for photonic and optoelectronic devices.Originality/value: Conjugated PPI is rarely enough reported but it is very interesting material as it has nitrogenatom in the backbone and it is isoelectronic counterpart of polyparaphenylenevinylene (PPV). This paper showthat doping influences on surface morphology, cristallinity and optical properties of polymer. Furthermore,doping mechanism and changes of polymer electronic structure have been proposed in this paper.
(PDF) Physical properties of polyazomethine thin films doped with iodine. Available from: https://www.researchgate.net/publication/40804800_Physical_properties_of_polyazomethine_thin_films_doped_with_iodine [accessed Oct 29 2024].

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