Temperature, back gate and polarization studies in nanotransistor based THz plasma detectors - Publication - Bridge of Knowledge

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Temperature, back gate and polarization studies in nanotransistor based THz plasma detectors

Abstract

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Authors (12)

  • Photo of W. Knap

    W. Knap

  • Photo of D. But

    D. But

  • Photo of M. Bawedin

    M. Bawedin

  • Photo of S. Chang

    S. Chang

  • Photo of O. Klimenko

    O. Klimenko

  • Photo of N. Dyakonova

    N. Dyakonova

  • Photo of D. Coquillat

    D. Coquillat

  • Photo of A. El

    A. El

  • Photo of F. Teppe

    F. Teppe

  • Photo of A. Gutin

    A. Gutin

  • Photo of T. Nagatsuma

    T. Nagatsuma

  • Photo of S. Cristoloveanu

    S. Cristoloveanu

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Details

Publication year:
2013
DOI:
Digital Object Identifier (open in new tab) 10.1109/icecom.2013.6684747
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