Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method - Open Research Data - Bridge of Knowledge

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Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method

Description

Thin films were prepared by radio frequency reactive magnetron sputtering technique. Metallic Te target was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate was heated at 200 °C. The distance between sputtered target and the Corning 1737 glass substrate was about 10 cm. Chemical composition of prepared samples was analyzed by X-ray photoemission spectroscopy method (XPS). The XPS measurement was performed at room temperature under ultra-high vacuum conditions, at pressures below 1.1 × 10−6 Pa by Omicron NanoScience equipment. Data analysis was performed with the CASA XPS software package using a Shirley background subtraction and least-square GaussianLorentzian – GL(30) curve fitting algorithm. The spectra obtained were calibrated to give a binding energy of 285.00 eV for C 1s. In this data set results of XPS investigations of thin films deposired under variuos Ar-O ratio are presented.

Dataset file

Te.opj
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Creative Commons: by 4.0 open in new tab
CC BY
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Data contained in dataset was not processed.
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Details

Year of publication:
2021
Verification date:
2021-07-12
Creation date:
2019
Dataset language:
English
Fields of science:
  • information and communication technology (Engineering and Technology)
  • materials engineering (Engineering and Technology)
DOI:
DOI ID 10.34808/jsg3-yy74 open in new tab
Verified by:
Gdańsk University of Technology

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