Structural investigations of the Al2O3 ultra thin films - Open Research Data - Bridge of Knowledge

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Structural investigations of the Al2O3 ultra thin films

Description

Ultra-thin layers of Al2O3 were deposited by atomic layer deposition (ALD) (Beneq TFS 200 ALD system). This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2 and 8 nm of alumina, deposited on silicon (111) substrates,  were selected for the tests. A Philips X'Pert diffractometer system with Cu filtered Kα radiation in the range 10° – 80° of 2θ was used for XRD measurements. No crystalline phase was bserved in prepared samples.

Dataset file

Al2O3.zip
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License:
Creative Commons: by 4.0 open in new tab
CC BY
Attribution
Raw data:
Data contained in dataset was not processed.
Software:
origin

Details

Year of publication:
2021
Verification date:
2021-07-14
Creation date:
2019
Dataset language:
English
Fields of science:
  • materials engineering (Engineering and Technology)
DOI:
DOI ID 10.34808/gb2e-eh30 open in new tab
Verified by:
Gdańsk University of Technology

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