A method of RTS noise identification in noise signals of semiconductor devices in the time domain - Publication - Bridge of Knowledge

Search

A method of RTS noise identification in noise signals of semiconductor devices in the time domain

Abstract

In the paper a new method of Random Telegraph Signal (RTS) noise identification is presented. The method is based on a standardized histogram of instantaneous noise values and processing by Gram-Charlier series. To find a device generating RTS noise by the presented method one should count the number of significant coefficients of the Gram-Charlier series. This would allow to recognize the type of noise. There is always one (first) significant coefficient (c0) representing Gaussian noise. If additional coefficients cr (where r > 0) appear it means that RTS noise (two-level as well as multiple-level) is detected. The coefficient representing the Gaussian component always has the highest value of all. The application of this method will be presented on the example of four devices, each with different noise (pure Gaussian noise signal, noise signal with two-level RTS noise, noise signal with three-level RTS noise and noise signal with not precisely visible occurrence of RTS noise).

Citations

  • 5

    CrossRef

  • 0

    Web of Science

  • 6

    Scopus

Keywords

Details

Category:
Articles
Type:
artykuł w czasopiśmie wyróżnionym w JCR
Published in:
Metrology and Measurement Systems no. XVII, pages 95 - 108,
ISSN: 0860-8229
Language:
English
Publication year:
2010
Bibliographic description:
Stawarz-Graczyk B., Dokupil D., Flisikowski P.: A method of RTS noise identification in noise signals of semiconductor devices in the time domain// Metrology and Measurement Systems. -Vol. XVII, nr. 1 (2010), s.95-108
DOI:
Digital Object Identifier (open in new tab) 10.2478/v10178-010-0010-z
Verified by:
Gdańsk University of Technology

seen 107 times

Recommended for you

Meta Tags