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Enhanced trap-assisted recombination in organic semiconductors

Abstract

An analytical model to describe the interaction of excitons and charge transfer states with deep traps is formulated for the case of molecular materials. Here, we have considered the influence of a trap-assisted recombination on this phenomenon. The final expression for the effective recombination rate has been derived from the Shockley–Read–Hall theory and kinetic equations which characterize different photophysical processes. The presented model can be applied in modeling of organic photovoltaic devices.

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Category:
Articles
Type:
artykuły w czasopismach
Published in:
SOLID STATE COMMUNICATIONS no. 321,
ISSN: 0038-1098
Language:
English
Publication year:
2020
Bibliographic description:
Szmytkowski J.: Enhanced trap-assisted recombination in organic semiconductors// SOLID STATE COMMUNICATIONS -Vol. 321, (2020), s.114044-
DOI:
Digital Object Identifier (open in new tab) 10.1016/j.ssc.2020.114044
Verified by:
Gdańsk University of Technology

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