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A quasi-2D small-signal MOSFET model - main results
Publication
- W. Kordalski
- Elektronika : konstrukcje, technologie, zastosowania - Year 2014
Dynamic properties of the MOS transistor under small-signal excitation are determined by kinetic parameters of the carriers injected into the channel, i.e., the low-field mobility, velocity saturation, mobility at the quiescent-point (Q-point), longitudinal electric field in the channel, by dynamic properties of the channel, as well as by an electrical coupling between the perturbed carrier concentration in the channel and the...