ISSN:
eISSN:
Disciplines
(Field of Science):
- automation, electronics, electrical engineering and space technologies (Engineering and Technology)
- biomedical engineering (Engineering and Technology)
- materials engineering (Engineering and Technology)
- mechanical engineering (Engineering and Technology)
- chemical sciences (Natural sciences)
- physical sciences (Natural sciences)
(Field of Science)
Ministry points: Help
Year | Points | List |
---|---|---|
Year 2024 | 70 | Ministry scored journals list 2024 |
Year | Points | List |
---|---|---|
2024 | 70 | Ministry scored journals list 2024 |
2023 | 70 | Ministry Scored Journals List |
2022 | 70 | Ministry Scored Journals List 2019-2022 |
2021 | 70 | Ministry Scored Journals List 2019-2022 |
2020 | 70 | Ministry Scored Journals List 2019-2022 |
2019 | 70 | Ministry Scored Journals List 2019-2022 |
2018 | 35 | A |
2017 | 35 | A |
2016 | 35 | A |
2015 | 35 | A |
2014 | 35 | A |
2013 | 35 | A |
2012 | 35 | A |
2011 | 35 | A |
2010 | 32 | A |
Model:
Points CiteScore:
Year | Points |
---|---|
Year 2023 | 6.8 |
Year | Points |
---|---|
2023 | 6.8 |
2022 | 5.9 |
2021 | 5.7 |
2020 | 5.9 |
2019 | 5.3 |
2018 | 4.3 |
2017 | 4.2 |
2016 | 4.7 |
2015 | 4.6 |
2014 | 4.7 |
2013 | 4.7 |
2012 | 5 |
2011 | 4.4 |
Impact Factor:
Sherpa Romeo:
Papers published in journal
Filters
total: 8
Catalog Journals
Year 2018
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Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering.
PublicationIron oxide films were deposited using high power impulse magnetron sputtering (HiPIMS) of an iron cathode in an argon/oxygen gas mixture at different gas pressures (0.5~Pa, 1.5~Pa, and 5.0~Pa). The HiPIMS system was operated at a repetition frequency $f = 100$~Hz with a duty cycle of 1~\%. A main goal is a comparison of film growth during conventional and electron cyclotron wave resonance-assisted HiPIMS. The deposition plasma...
Year 2017
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Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies
Publication
Year 2010
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Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering
PublicationThe paper is focused on a study of formation of TiOxNy thin films prepared by pulsed magnetron sputtering of metallic Ti target. Oxygen and nitrogen were delivered into the discharge in the form of reactive gases O2 and N2. The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. The substrates were on floating...
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Effect of nitrogen doping on TiOxNythin film formation at reactive high-power pulsed magnetron sputtering
Publication
Year 2009
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Development of multilayer coatings for forming dies and tools of aluminium alloy from liquid state
Publication -
Physical properties of homogeneous TiO2 films prepared by high power impulse magnetron sputtering as a function of crystallographic phase and nanostructure
PublicationOptical, photo-electrochemical, crystallographic and morphological properties of TiO2 thin films prepared by high power impulse magnetron sputtering at low substrate temperatures (<65 ◦C) without post-deposition thermal annealing are studied. The film composition-anatase, rutile or amorphous TiO2-is adjusted by the pressure (p ∼ 0.75-15 Pa) in the deposition chamber. The different crystallographic phases were determined with grazing...
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Physical properties of homogeneous TiO2films prepared by high power impulse magnetron sputtering as a function of crystallographic phase and nanostructure
Publication
Year 2007
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The influence of the thickness, recombination and space charge on the loss of photocurrent in organic semiconductors: an analytical model
PublicationWe propose an analytical model of the photocurrent efficiency dependence on the light intensity in organic semiconductors. The influence of the thickness of sample, space charge effects and recombination of charge on the loss of photocurrent has been considered. We demonstrate that the presented model is the enhancement of an analytical model reported recently by Rappaport et al (2005 J. Appl. Phys. 98 033714). The method to identify...
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