Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel

Description

The presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg) of the top-gated GFET device.

In this study the GFET device with 10 μm x 10 μm graphene channel, 10 nm top-gate dielectric and 300 nm SiO2 layer was analyzed. The drift-diffusion approach was employed to calculate self-consistently the I-V behavior of the transistor at initial temperature of 293K. The mobility of the both type of carriers (electrons and holes) was 3000 cm2/(V*s) and the Dirac voltage was 0 V.

Dataset file

GFET_I-V_10um_x_10um.zip

30.0 kB, S3 ETag 87563b06292e9f61f23997b5e00c6af6-1, downloads: 66

The file hash is calculated from the formula
hexmd5(md5(part1)+md5(part2)+...)-{parts_count} where a single part of the file is 512 MB in size.

Example script for calculation:
https://github.com/antespi/s3md5

download

File details

License:: open in new tab

CC BY

Attribution

Details

Year of publication:

2021

Verification date:

2021-03-22

Creation date:

2020

Dataset language:

English

Fields of science:

Automation, electronic and electrical engineering (Engineering and Technology)
materials engineering (Engineering and Technology)
physical sciences (Natural sciences)

DOI:

10.34808/g3ag-nf04

Verified by:

Gdańsk University of Technology

Keywords

References

Cite as

Authors

seen 159 times

Search