A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors - Publication - Bridge of Knowledge

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A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors

Abstract

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Authors (12)

  • Photo of P. Sai

    P. Sai

  • Photo of D. But

    D. But

  • Photo of K. Nowakowski-Szkudlarek

    K. Nowakowski-Szkudlarek

  • Photo of J. Przybytek

    J. Przybytek

  • Photo of P. Prystawko

    P. Prystawko

  • Photo of I. Yahniuk

    I. Yahniuk

  • Photo of P. Wisniewski

    P. Wisniewski

  • Photo of B. Stonio

    B. Stonio

  • Photo of M. Slowikowski

    M. Slowikowski

  • Photo of S. Rumyantsev

    S. Rumyantsev

  • Photo of W. Knap

    W. Knap

  • Photo of G. Cywinski

    G. Cywinski

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Details

Publication year:
2018
DOI:
Digital Object Identifier (open in new tab) 10.1109/irmmw-thz.2018.8510420
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