AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range - Publication - Bridge of Knowledge

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AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

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Authors (16)

  • Photo of P Sai

    P Sai

  • Photo of D But

    D But

  • Photo of I Yahniuk

    I Yahniuk

  • Photo of M Grabowski

    M Grabowski

  • Photo of M Sakowicz

    M Sakowicz

  • Photo of P Kruszewski

    P Kruszewski

  • Photo of P Prystawko

    P Prystawko

  • Photo of A Khachapuridze

    A Khachapuridze

  • Photo of K Nowakowski-Szkudlarek

    K Nowakowski-Szkudlarek

  • Photo of J Przybytek

    J Przybytek

  • Photo of P Wiśniewski

    P Wiśniewski

  • Photo of B Stonio

    B Stonio

  • Photo of M Słowikowski

    M Słowikowski

  • Photo of S Rumyantsev

    S Rumyantsev

  • Photo of W Knap

    W Knap

  • Photo of G Cywiński

    G Cywiński

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Details

Category:
Magazine publication
Type:
Magazine publication
Published in:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY no. 34, edition 2,
ISSN: 0268-1242
ISSN:
0268-1242
Publication year:
2019
DOI:
Digital Object Identifier (open in new tab) 10.1088/1361-6641/aaf4a7
Verified by:
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