Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics - Publication - Bridge of Knowledge

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Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

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Authors (9)

  • Photo of Maksym Dub

    Maksym Dub

  • Photo of Pavlo Sai

    Pavlo Sai

  • Photo of Maciej Sakowicz

    Maciej Sakowicz

  • Photo of Lukasz Janicki

    Lukasz Janicki

  • Photo of Dmytro But

    Dmytro But

  • Photo of Paweł Prystawko

    Paweł Prystawko

  • Photo of Grzegorz Cywiński

    Grzegorz Cywiński

  • Photo of Wojciech Knap

    Wojciech Knap

  • Photo of Sergey Rumyantsev

    Sergey Rumyantsev

Cite as

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Details

Category:
Magazine publication
Type:
Magazine publication
Published in:
Micromachines no. 12, edition 6,
ISSN: 2072-666X
ISSN:
2072-666X
Publication year:
2021
DOI:
Digital Object Identifier (open in new tab) 10.3390/mi12060721
Verified by:
No verification

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