Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics - Publication - Bridge of Knowledge

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Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics

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Authors (13)

  • Photo of M. Dub

    M. Dub

  • Photo of P. Sai

    P. Sai

  • Photo of A. Przewloka

    A. Przewloka

  • Photo of D. But

    D. But

  • Photo of M. Sakowicz

    M. Sakowicz

  • Photo of M. Haras

    M. Haras

  • Photo of A. Krajewska

    A. Krajewska

  • Photo of I. Pasternak

    I. Pasternak

  • Photo of P. Prystawko

    P. Prystawko

  • Photo of G. Cywinski

    G. Cywinski

  • Photo of W. Knap

    W. Knap

  • Photo of S. Rumyantsev

    S. Rumyantsev

  • Photo of Maciej Haras

    Maciej Haras

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Details

Publication year:
2022
DOI:
Digital Object Identifier (open in new tab) 10.1109/irmmw-thz50927.2022.9895991
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